Triode/MOS tube/transistor/module
Número de pieza
UMW (Friends Taiwan Semiconductor)
Fabricantes
Descripción
66929 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET uses Fairchild's advanced Power Trench
Descripción
93349 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 7.5A, 1.2Ω@10V
Descripción
72669 PCS
En stock
Número de pieza
LONTEN (Longteng Semiconductor)
Fabricantes
Descripción
96511 PCS
En stock
Número de pieza
XDM (Xin Da Mao)
Fabricantes
VDMOS single tube
Descripción
55518 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
This P-channel enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed for battery powered applications such as notebook computers and cell phones. The device has excellent on-resistance performance even at gate drive voltages as low as 2.5V.
Descripción
96777 PCS
En stock
Número de pieza
FH (Feng Hua)
Fabricantes
PNP, Vceo=-30V, Ic=-0.8A
Descripción
77046 PCS
En stock
Número de pieza
UTC(Youshun)
Fabricantes
N-channel, 100V, 15.6A, 100mΩ@10V
Descripción
86335 PCS
En stock
