Triode/MOS tube/transistor/module
Samwin (Semipower)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 100@10mA, 1V transistors, PNP 40V 200mA 200mW
Descripción
DIODES (US and Taiwan)
Fabricantes
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
20V P-channel MOS
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
SALLTECH (Sari)
Fabricantes
Infineon (Infineon)
Fabricantes
VISHAY (Vishay)
Fabricantes
P-channel, -200V, -11A, 500mΩ@-10V
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 55V, 75A, 4.7mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Hottech (Heketai)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJS4606A-F2-1100HF
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes