Triode/MOS tube/transistor/module
Voltage VDSS600V, conduction resistance Rds2.1 ohms, charge Qg46nC, current ID5A
Descripción
LRC (Leshan Radio)
Fabricantes
P channel -50V -130mA
Descripción
SI (deep love)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
ST (STMicroelectronics)
Fabricantes
PINGWEI (Pingwei)
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.4-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 7
Descripción
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Convert Semiconductor
Fabricantes
FH (Feng Hua)
Fabricantes
NPN, 45V, 100mA
Descripción