Triode/MOS tube/transistor/module
PSI (Baolixin)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
NPN,Vceo=400V,Ic=200mA,hfe=30~35
Descripción
YANGJIE (Yang Jie)
Fabricantes
NPN 160V 600mA
Descripción
Wuxi Unisplendour
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
AnBon (AnBon)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-223 encapsulation and is suitable for low power surface mount applications.
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
Polarity PNP Power Dissipation (W) 0.3 Maximum Collector Current (mA) 1500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 800/80 Maximum operating frequency (MHz) 100
Descripción
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
N-channel, 600V, 7A
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-30V, Ic=-3A, hfe=200~400
Descripción