Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
IC(A) 0.6 VCEO(V) 160 hFE(β) 100-300 fT(MHZ) 300 VCBO(V) 180 VCE(sat)(W) 0.15 Type NPN
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 950V 8A
Descripción
N-channel, 60V, 28A, 25mΩ@10V
Descripción
MCC (Meiweike)
Fabricantes
onsemi (Ansemi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
CBI (Creation Foundation)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
onsemi (Ansemi)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
Type PNP IC(A) -3 VCBO(V) -60 VCEO(V) -60 VEBO(V) -7 VCE(sat)(V) -0.3
Descripción
ST (STMicroelectronics)
Fabricantes
Intelligent Power Module
Descripción
Infineon (Infineon)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
onsemi (Ansemi)
Fabricantes
This high voltage PNP bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
Samwin (Semipower)
Fabricantes
Infineon (Infineon)
Fabricantes