Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-40V, Ic=-0.2A, hfe=100~300, silk screen 2A
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
SILAN (Silan Micro)
Fabricantes
N-channel, 600V, 2A, 4.2Ω@10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
P-channel, -20V, -3A, 64 milliohms.
Descripción
FUXINSEMI (Fuxin Senmei)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 8Ω@4V, 10mA Threshold Voltage ( Vgs(th)@Id): 1.5V@100uA N-channel, 30V, 0.1A, 8Ω@4V
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P-channel, -20V, -8A, 16mΩ@-4.5V
Descripción
KY (Han Kyung Won)
Fabricantes
NPN, Vceo=300V, Ic=500mA, hfe=40~
Descripción
PNP, Vceo=-45V, Ic=-800mA, hfe=160~400
Descripción
Infineon (Infineon)
Fabricantes
HUAKE (Huake)
Fabricantes