Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
LRC (Leshan Radio)
Fabricantes
NPN, Vceo=65V, Ic=100mA, hfe=200~450
Descripción
VISHAY (Vishay)
Fabricantes
ST (STMicroelectronics)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
CBI (Creation Foundation)
Fabricantes
NPN,Vceo=40V,Ic=0.2A
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 220@2mA,5V
Descripción
Infineon (Infineon)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD25304W1015 20V P-Channel NexFET Power MOSFET 6-DSBGA
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
YFW (You Feng Wei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
P+N double MOS tube, 40V/8A plus -40V/-7A,
Descripción
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
NPN, Vceo=65V, Ic=100mA
Descripción