Triode/MOS tube/transistor/module
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±8 Vth(V) 0.5-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 6
Descripción
NCE (Wuxi New Clean Energy)
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Infineon (Infineon)
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CJ (Jiangsu Changdian/Changjing)
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APM (Jonway Microelectronics)
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DIODES (US and Taiwan)
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PNP, Vceo=-30V, Ic=-5.5A
Descripción
Infineon (Infineon)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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BLUE ROCKET (blue arrow)
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GOFORD (valley peak)
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GOFORD (valley peak)
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200V 30A 62mΩ@10V
Descripción
VISHAY (Vishay)
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VBsemi (Wei Bi)
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TOSHIBA (Toshiba)
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NPN, Vceo=50V, Ic=150mA
Descripción
CBI (Creation Foundation)
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YANGJIE (Yang Jie)
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onsemi (Ansemi)
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This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.
Descripción