Triode/MOS tube/transistor/module
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V
Descripción
onsemi (Ansemi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
GOFORD (valley peak)
Fabricantes
N-channel 60V, 20A, 80mΩ@4.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
KY (Han Kyung Won)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-350V, Ic=-500mA
Descripción
VBsemi (Wei Bi)
Fabricantes
HT (Golden Honor)
Fabricantes
Gear: 300-400
Descripción
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-45V, Ic=-500mA, hfe=100~600
Descripción
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 4.5A, 2.5Ω@10V
Descripción
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 4.5A, 2.5Ω@10V
Descripción