Triode/MOS tube/transistor/module
VISHAY (Vishay)
Fabricantes
N-channel, 60V, 5.8A, 52mΩ@4.5V
Descripción
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is dedicated to the MC3419 Solid State Subscriber Loop Interface Circuit (SLIC). The MJE270 (NPN) and MJE271 (PNP) are complementary devices.
Descripción
luxin-semi (Shanghai Luxin)
Fabricantes
VCES(V) 650 IC(A)@144℃ 50 VCE(sat)(V) 1.8 E(off)(mj) 1.1 Vf(V) 2.4
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-25V, Ic=-500mA, hfe=200~350, silk screen 2T1
Descripción
VISHAY (Vishay)
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 54/70 Continuous Drain Current ID (A) 4.1
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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TOSHIBA (Toshiba)
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VBsemi (Wei Bi)
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ST (STMicroelectronics)
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VBsemi (Wei Bi)
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HUXN (Huixin)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 600mA Power (Pd): 300mW Collector cut-off current (Icbo): 0.1uA DC current gain (hFE@Ic,Vce): 100@150mA, 1V Operating temperature: -55℃~+150℃@(Tj)
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
NCE (Wuxi New Clean Energy)
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VBsemi (Wei Bi)
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