Triode/MOS tube/transistor/module
Samwin (Semipower)
Fabricantes
WILLSEMI (Will)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
DTC114YCA-F2-0000HF
Descripción
MCC (Meiweike)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
VISHAY (Vishay)
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
APM (Jonway Microelectronics)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 30V, 0.1A, 8Ω@4V
Descripción
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA
Descripción
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
Descripción