Triode/MOS tube/transistor/module

N-channel, 600V, 11A, 0.44Ω@10V

This N-channel MV MOSFET is produced using the advanced PowerTrench process which incorporates shielded gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

N-channel, 30V, 13A, 8mΩ@10V

N-channel 30V 29A

Ultra high voltage MOS tube

NPN

Silicon carbide module 1200V13mΩ

P-channel, 60V, 12A, 132mΩ@10V

7-way Darlington transistor array@@New seven-way high withstand voltage, high current Darlington transistor array high voltage (50V); electrostatic capacity: 8000V (HBM)