Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-100mA, hfe=200(Typ)

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

The XS DrMOS family is ON Semiconductor's next generation, fully optimized, ultra-compact integrated MOSFET and driver power stage solution for high current, high frequency, synchronous buck, DC-DC applications. The FDMF6823A integrates a driver IC and a bootstrap Schottky diode within a thermally-managed, ultra-compact 6x6mm encapsulation. Integrated, this complete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance and power MOSFET RDS(ON). The XS DrMOS family uses ON Semiconductor's high-performance PowerTrench MOSFET technology, which dramatically reduces switching ringing, eliminating the need for snubber circuits found in most buck converter applications. Driver ICs with reduced dead time and propagation delay further enhance performance. The temperature warning feature warns of potential over-temperature conditions. The FDMF6823A incorporates Skip Mode (SMOD#) to improve energy efficiency at light loads. The FDMF6823A also provides a 3-state 5V PWM input for compatibility with a variety of PWM controllers.

N-channel, 100V, 40A, 21mΩ@10V

N-channel, 30V, 100A, 3mΩ@10V

Type N VDSS(V) 60 ID@TC=78?C(A) 3 PD@TC=78?C(W) 1.38 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.58V 120

650V, 10A, 0.8Ω@10V