Triode/MOS tube/transistor/module

N channel

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 50A Power (Pd): 78W On-Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 17nC@10V Input capacitance (Ciss@Vds): 0.86nF@15V, Vds=60V Id=50A Rds=10mΩ, operating temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

N-channel, 600V, 10A, 550mΩ@10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

N-channel, 200V, 18A, 125mΩ@10V

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N channel.60V.50A

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -80V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V