Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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ST (STMicroelectronics)
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HUASHUO (Huashuo)
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DIODES (US and Taiwan)
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PNP, Vceo=-20V, Ic=-2.5A
Descripción
VBsemi (Wei Bi)
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Infineon (Infineon)
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ORIENTAL SEMI (Dongwei)
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Sinopower (large and medium)
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Infineon (Infineon)
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Techcode (TED)
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Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 18 On-Resistance (mΩ) 3.6 Input Capacitance (Ciss) 1350 Reverse Transfer Capacitance Crss (pF) 65 Gate Charge (Qg ) 19
Descripción
LRC (Leshan Radio)
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Littelfuse (American Littelfuse)
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VISHAY (Vishay)
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TI (Texas Instruments)
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CSD18537NKCS 60V, N-Channel NexFET Power MOSFET
Descripción
Infineon (Infineon)
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VBsemi (Wei Bi)
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HGSEMI (Huaguan)
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LONTEN (Longteng Semiconductor)
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TOSHIBA (Toshiba)
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