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FGD3N60LSDTM 40W 600V 6A IGBT, 600V, 3A, 1.2V, DPAK, Planar

FGD3N60LSDTM

40W 600V 6A IGBT, 600V, 3A, 1.2V, DPAK, Planar
Número de pieza
FGD3N60LSDTM
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
TO-252
Embalaje
taping
Número de paquetes
2500
Descripción
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) offer extremely low conduction losses. The device is suitable for applications requiring very low on-state voltage drop.
Solicitud de cotización
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En stock 88571 PCS
Información del contacto
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