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NJVMJD112T4G NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor

NJVMJD112T4G

NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Número de pieza
NJVMJD112T4G
Categoría
Triode/MOS Tube/Transistor > Darlington Tube
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
TO-252
Embalaje
taping
Número de paquetes
2500
Descripción
Solicitud de cotización
Complete todos los campos obligatorios y haga clic en "ENVIAR", nos comunicaremos con usted en 12 horas por correo electrónico. Si tiene algún problema, deje mensajes o envíe un correo electrónico a [email protected], le responderemos lo antes posible.
En stock 94228 PCS
Información del contacto
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Palabras clave deNJVMJD112T4G
NJVMJD112T4G Componentes electrónicos
NJVMJD112T4G Ventas
NJVMJD112T4G Proveedor
NJVMJD112T4G Distribuidor
NJVMJD112T4G Tabla de datos
NJVMJD112T4G Fotos
NJVMJD112T4G Precio
NJVMJD112T4G Oferta
NJVMJD112T4G El precio más bajo
NJVMJD112T4G Buscar
NJVMJD112T4G Adquisitivo
NJVMJD112T4G Chip