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NSS1C200MZ4T3G PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A

NSS1C200MZ4T3G

PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A
Número de pieza
NSS1C200MZ4T3G
Categoría
Triode/MOS Tube/Transistor > Triode(BJT)
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOT-223-4
Embalaje
taping
Número de paquetes
4000
Descripción
Low saturation voltage bipolar junction transistors (BJTs) are tiny surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Solicitud de cotización
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En stock 54186 PCS
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