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NSS20101JT1G NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor

NSS20101JT1G

NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor
Número de pieza
NSS20101JT1G
Categoría
Triode/MOS Tube/Transistor > Triode(BJT)
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SC-89-3
Embalaje
taping
Número de paquetes
3000
Descripción
ON Semiconductor's e2PowerEdge series of low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Solicitud de cotización
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En stock 73523 PCS
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