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NSS40302PDR2G 1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A

NSS40302PDR2G

1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A
Número de pieza
NSS40302PDR2G
Categoría
Triode/MOS Tube/Transistor > Triode(BJT)
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-8
Embalaje
taping
Número de paquetes
2500
Descripción
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors are surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. Typical applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Solicitud de cotización
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En stock 72302 PCS
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