onsemi (Ansemi)

TO-252

taping

2500

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias within 3V to 5V, thus enabling true direct switching from logic level (5V) ICs. switching power supply control. The previous development model was TA09870.