onsemi (Ansemi)

TO-252

taping

2500

These N-channel logic level power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. They are suitable for logic level (5V) drive power supplies in applications such as programmable controllers, automotive switches, switching regulators, motor relay drivers, and transmitter switches for bipolar transistors. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus enabling true switching power supply control directly in the logic circuit supply voltage. The previous development model was TA09871.