Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 55V, 169A, 5.3mΩ@10V
Descripción
N+P dual channel, 30V/6A(-30V/-6.5A)
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
VISHAY (Vishay)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
BL (Shanghai Belling)
Fabricantes
onsemi (Ansemi)
Fabricantes
This NPN transistor is suitable for general purpose amplifier applications. This device features SOT-723 encapsulation and is suitable for low power surface mount applications where board space is at a premium.
Descripción
AGM-Semi (core control source)
Fabricantes
DIODES (US and Taiwan)
Fabricantes