Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N-channel, VDSS withstand voltage 30V, ID current 150A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,
Descripción
N-channel, 25V, 60A, 9mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
N-Channel, PowerTrench MOSFET, 60V, 80 A, 3.8 mΩ
Descripción
onsemi (Ansemi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
NPN, Vceo=50V, Ic=100mA
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
onsemi (Ansemi)
Fabricantes
PUOLOP (Dipu)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 120@50mA,1V
Descripción
Potens (Bosheng Semiconductor)
Fabricantes
P-channel, -30V, -7A
Descripción
Wuxi Unisplendour
Fabricantes
ST (STMicroelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes