Triode/MOS tube/transistor/module
MATSUKI (pine wood)
Fabricantes
PNP, Vceo=50V, Ic=150mA, hfe=25~700
Descripción
LRC (Leshan Radio)
Fabricantes
Hottech (Heketai)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJL3134KDW-F2-0000HF
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
ST (STMicroelectronics)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±8 Vth(V) 0.5-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 6
Descripción
RealChip (Shenxin Semiconductor)
Fabricantes
Structure NPN Withstanding voltage/V 40V Collector current (IC) 200mA MPQ 3K
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
4 NPN, Vceo=80V, Ic=1.75A
Descripción
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel 250V 15.6A
Descripción
N-channel 30V 8.5A
Descripción
DIODES (US and Taiwan)
Fabricantes