Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TECH PUBLIC (Taizhou)
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HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Field effect transistor (MOSFET) Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 30A On-resistance (RDS(on)@Vgs,Id): 26mΩ@10V, 15A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
P-channel, -30V, -10A, 20mΩ@-10V
Descripción
Infineon (Infineon)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
N-channel, 80V, 190A, 3.9mΩ@10V
Descripción
TOSHIBA (Toshiba)
Fabricantes
NPN 60V 3A 500mW
Descripción
ST (STMicroelectronics)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
APM (Jonway Microelectronics)
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VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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DIODES (US and Taiwan)
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SPS (American source core)
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BLUE ROCKET (blue arrow)
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onsemi (Ansemi)
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VISHAY (Vishay)
Fabricantes