Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
SHIKUES (Shike)
Fabricantes
NPN, Vceo=80V, Ic=1A, hfe=100~250, parameters are the same as other brands, cost-effective
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
2SA1611 TRANSISTOR (PNP) SOT323
Descripción
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=65V, Ic=100mA
Descripción
CRMICRO (China Resources Micro)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
P-channel, -30V, -17A, 8mΩ@-10V
Descripción
ARK (Ark Micro)
Fabricantes
N-Channel 400V 0.24A 1.5W
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 300V Collector Current (Ic): 300mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 250nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@20mA, 2mA DC current gain (hFE@Ic,Vce): 100@10mA, 10V Characteristic frequency (fT): 50MHz Operating temperature: +150℃@(Tj)
Descripción
MATSUKI (pine wood)
Fabricantes
P-channel, -40V, -18.6A, 45mΩ@-10V
Descripción
SINO-IC (Coslight Core)
Fabricantes