Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
Convert Semiconductor
Fabricantes
Convert Semiconductor
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
P-channel 30V 9.1A, Rds<20mΩ@Vgs=-10V super cost-effective
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
P-Channel Switch This device is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. Adopt craft 88 design.
Descripción
onsemi (Ansemi)
Fabricantes
P-Channel Switch This device is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. Adopt craft 88 design.
Descripción
VISHAY (Vishay)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN 45V 100mA
Descripción
Ascend (Ansend)
Fabricantes
N-type MOS tube@@VDS20V,ID60A,RDS(on),Typ@VGS=10V5mR
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=12V, Ic=3A
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 12 VGS(th)(v) 1.9 RDS(ON)(m?)@4.268V 13 Qg(nC)@4.5V 6.3 QgS(nC) 2.9 Qgd(nC) 2 Ciss(pF) 770 Coss(pF) 130 Crss(pF) 76
Descripción
Ultra high voltage MOS tube
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
Automotive power MOSFETs for low power applications. 60V 295mA 1.6 Ω dual N-channel SC?88, ESD protected, logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
Descripción