Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -8 VGS(th)(v) -2 RDS(ON)(m?)@4.307V 25 Qg(nC) @4.5V 21 QgS(nC) 2.6 Qgd(nC) 6.2 Ciss(pF) 1000 Coss(pF) 210 Crss(pF) 150

This N-channel MOSFET is designed to improve the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or traditional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching and body diode reverse recovery performance.

2SA2013 is a bipolar transistor, -50V, -4A, low saturation voltage, (PNP)NPN single PCP, for DC-DC converter applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This N-channel MOSFET is specifically designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, either synchronously or conventionally switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

2 NPN + 2 PNP (H bridge), 40V, 2A