Triode/MOS tube/transistor/module

N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 5.8A Power (Pd): 1.4W On-resistance (RDS(on)@Vgs,Id): 25mΩ@10V, 5.8A

PNP

Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 5.8A Power (Pd): 1.4W On-resistance (RDS(on)

This power MOSFET is suitable for withstanding high energy in avalanche and commutation modes. These devices are designed for low-voltage, high-speed switching applications in power supplies, converters, and power-motor control, especially in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety against unintended transient voltages margin.

P-channel, -60V, -35A, 46mΩ@-10V

N-channel, 30V, 8.9A, 20mΩ@10V