Triode/MOS tube/transistor/module

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 20V, current: 50A, 10V internal resistance (Max): 4.5V internal resistance (Max): 0.0065Ω, power: 40W

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

Darlington transistor

Type: P-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): -4.2A Power (Pd): 1.56W On-resistance (RDS(on)

NPN, Vceo=100V, Ic=4A, hfe=100~200