Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
Techcode (TED)
Fabricantes
N-channel 30V 16mΩ@4.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
CBI (Creation Foundation)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
PNP 45V 100mA
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-50V, Ic=150mA, hfe=180~390, silk screen FR
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 700V, 7A
Descripción
DIODES (US and Taiwan)
Fabricantes
P-channel, -20V, -2.6A, 110mΩ@-4.5V
Descripción