Triode/MOS tube/transistor/module
onsemi (Ansemi)
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VBsemi (Wei Bi)
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BORN (Born Semiconductor)
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onsemi (Ansemi)
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HXY MOSFET (Huaxuanyang Electronics)
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N-channel, VDSS withstand voltage 50V, ID current 500mA, RDON on-resistance 2R@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3.0V,
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
ST (STMicroelectronics)
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ST (STMicroelectronics)
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UMW (Friends Taiwan Semiconductor)
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LONTEN (Longteng Semiconductor)
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LONTEN (Longteng Semiconductor)
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SALLTECH (Sari)
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REASUNOS (Ruisen Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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TECH PUBLIC (Taizhou)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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MSKSEMI (Mesenco)
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Transistor type: 1 NPN- Pre-biased Power (Pd): 150mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 1.4V@1mA, 0.3V Maximum input voltage (VI(off)@ Ic/Io, Vce/Vcc): 300mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@5mA, 0.25mA DC current gain (hFE@Ic, Vce): 68@5mA, 5V
Descripción