Triode/MOS tube/transistor/module

NPN 400V 225mA

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation (1mm high) with an extremely small footprint and footprint (8x8 mm2). SuperFET II MOSFETs feature Power88 encapsulation with lower parasitic power supply inductance and separated power and drive sources for excellent switching performance. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).

NPN,Vceo=400V,Ic=1.5A,hfe=20~25

PNP

N-channel, 30V, 6.8A, 22mΩ@4.5V

N-channel, 45V, 60A, 9.7mΩ@10V

Double PNP

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -20V, current: -75A, 10V internal resistance (Max): 0.0075Ω, 4.5V internal resistance (Max): 0.0098Ω, power: 60W